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Ordering number : ENA0440
SCH2811
SANYO Semiconductors
DATA SHEET
SCH2811
Features
* *
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
General-Purpose Switching Device Applications
*
Composite type with a P-channel sillicon MOSFET and a Schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] * Low ON-resistance. * Ultrahigh-speed switching. * 4V drive. [SBD] * Short reverse recovery time. * Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 30 0.5 3 --55 to +125 --55 to +125 V V A A C C VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) 1unit --30 20 --1.0 --4.0 0.6 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit
Marking : QL
Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 / 61506PE MS IM TB-00002321 No. A0440-1/6
SCH2811
Electrical Characteristics at Ta=25C
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF IR C trr IR=0.5mA IF=0.5A VR=15V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. 30 0.42 13 10 0.48 120 V V A pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=16V, VDS=0V VDS=--10V, ID=-1mA VDS=--10V, ID=-0.5A ID=--0.5A, VGS=-10V ID=--0.3A, VGS=-4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-10V, ID=--1.0A VDS=--10V, VGS=-10V, ID=--1.0A VDS=--10V, VGS=-10V, ID=--1.0A IS=--1.0A, VGS=0V --30 --1 10 --1.2 0.57 0.95 320 590 104 22 17 12.5 24 12 12.2 3.3 0.48 0.45 --0.91 --1.5 420 830 --2.6 V A A V S m m pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit
Package Dimensions
unit : mm 7028-003
Electrical Connection
6
1.6
0.05
5
4
0.2
654
0.2
1.6
1.5
1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain
Top view
0.05
1
23 0.5
0.56
1
2
3
1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain SANYO : SCH6
0.25
No. A0440-2/6
SCH2811
Switching Time Test Circuit
[MOSFET]
VIN 0V --10V VIN ID= --0.6A RL=25 VDD= --15V
trr Test Circuit
[SBD] Duty10% 100mA 10mA trr
SCH2811
D
PW=10s D.C.1%
VOUT
10s --5V
G
P.G
50
S
--1.2
ID -- VDS
.0V
[MOSFET]
--2.0 --1.8 --1.6
ID -- VGS
VDS= --10V
100mA
50
100
10
[MOSFET]
Ta= --25 C 75 C
--1.5
--1 0
--6
--1.0
Drain Current, ID -- A
--4
Drain Current, ID -- A
--0.8
--1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2
--3.0V
--0.6
--0.4
0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0 0 --0.5 --1.0 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5
1200
Drain-to-Source Voltage, VDS -- V IT07278 RDS(on) -- VGS [MOSFET]
1200
Gate-to-Source Voltage, VGS -- V IT07280 RDS(on) -- Ta [MOSFET]
Ta=25C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
1000
1000
800
800
Ta =
--0.2
600
--500mA
600
I D=
mA --300
400
ID= --300mA
400
I D= --500
200
200
0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
0 --60
--40
--20
0
20
25 C 75 C --25 C
VGS= --2.5V
= --4V , VGS
= --10V mA, V GS
40
60
80
100
120
140
Gate-to-Source Voltage, VGS -- V
IT11174
Ambient Temperature, Ta -- C
IT11175
No. A0440-3/6
25 C
160
.0V
.0V
SCH2811
5
yfs -- ID
[MOSFET] VDS= --10V
3 2 --1.0
IS -- VSD
[MOSFET] VGS=0V
Forward Transfer Admittance, yfs -- S
3
1.0 7 5 3 2
Ta= 7
--0.5 --0.6
Ta
C 75
--0.1 7 5 3 2
0.1 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
--0.01 --0.4
--0.7
25
-2 =-
C --25 C
--0.8 --0.9
C 25 5C
Source Current, IS -- A
2
7 5 3 2
5 C
--1.0
--1.1
--1.2
Drain Current, ID -- A
3 2
IT07286
SW Time -- ID
[MOSFET] VDD= --15V VGS= --10V
Ciss, Coss, Crss -- pF
3 2
Diode Forward Voltage, VSD -- V IT07288 Ciss, Coss, Crss -- VDS [MOSFET] f=1MHz
Switching Time, SW Time -- ns
100 7 5 3 2 100 7 5
Ciss
tf
td(on)
10 7 5 3 2 --0.01
td(off)
3 2
tr
Coss Crss
0 --5 --10 --15 --20 --25 --30
10 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3
Drain Current, ID -- A
--10 --9
IT07290
VGS -- Qg
[MOSFET]
Gate-to-Source Voltage, VGS -- V
VDS= --10V ID= --1.0A
Drain Current, ID -- A
7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
Drain-to-Source Voltage, VDS -- V IT07292 ASO [MOSFET]
IDP= --4A
10s
10 s 0 s
1m
--8 --7 --6 --5 --4 --3 --2 --1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IT11176
ID= --1A
10 m s
Operation in this area is limited by RDS(on).
--0.01 --0.01 2 3
Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit
5 7 --0.1 23 5 7 --1.0 23 5 7 --10 23 5
Total Gate Charge, Qg -- nC
0.8
PD -- Ta
Drain-to-Source Voltage, VDS -- V
DC op er
10 0m s
ati on a= (T ) C 25
IT11177
[MOSFET]
Allowable Power Dissipation, PD -- W
0.6
M
ou
nte
do
na
ce
0.4
ram
ic
bo
ard
(9
00
0.2
mm
2
!0
.8m
m)
1u
0 0 20 40 60 80 100 120 140
nit
160
Ambient Temperature, Ta -- C
IT11178
No. A0440-4/6
SCH2811
1.0 7 5
IF -- VF
[SBD]
100000 7 5 3 2
IR -- VR
C
100C
[SBD]
3 2
Reverse Current, IR -- A
Forward Current, IF -- A
10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0
5 Ta=12
75C
0.1 7 5 3 2 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 IT07927
50C
25C
Ta= 125 C 100 C 75C 50 C 25 C
5
10
15
20
25
30 IT07928
Forward Voltage, VF -- V
Average Forward Power Dissipation, PF(AV) -- W
0.35
PF(AV) -- IO
(1)
Reverse Voltage, VR -- V
100 7
[SBD]
C -- VR
[SBD]
Rectangular wave
360
f=1MHz
Interterminal Capacitance, C -- pF
0.6
0.30
(2) (4) (3)
5
0.25
Sine wave
0.20 180 0.15 360
3 2
10 7 5 3 0.1
0.10
0.05 0 0 0.1 0.2
(1) Rectangular wave =60 (2) Rectangular wave =120 (3) Rectangular wave =180 (4) Sine wave =180
0.3 0.4 0.5
2
3
5
7 1.0
2
3
5
7 10
2
3
5
7
Average Output Current, IO -- A
3.5
IT08187
IFSM -- t
IS
Reverse Voltage, VR -- V
IT07891
[SBD]
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave
3.0
2.5
20ms t
2.0
1.5
1.0
0.5 0 7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Time, t -- s
ID00338
No. A0440-5/6
SCH2811
Note on usage : Since the SCH2811 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of June, 2006. Specifications and information herein are subject to change without notice.
PS No. A0440-6/6

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